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作 者:ZHU ZhenGang SU Gang
机构地区:[1]School of Electronics,Eletrical and Communication Engineering,University of Chinese Academy of Sciences [2]Institut fr Physik,Martin-Luther-Universitt,Halle-Wittenberg Nanotechnikum-Weinberg,Heinrich-Damerow-Strasse 4 D-06120 Halle(Saale),Germany [3]School of Physics,University of Chinese Academy of Sciences
出 处:《Science China(Physics,Mechanics & Astronomy)》2013年第1期166-183,共18页中国科学:物理学、力学、天文学(英文版)
基 金:supported in part by the National Science Fund for Distinguished Young Scholars of China(Grant No. 10625419);the National Natural Science Foundation of China(Grant Nos. 90922033 and 10934008);the Ministry of Science and Technology of China (Grant Nos.2012CB932900 and 2013CB933401);the Chinese Academy of Sciences,China,the DFG and the state of Saxony-Anhalt,Germany
摘 要:A brief review is presented,which includes the direct current,alternate current,electrical and thermoelectrical transport as well as spin transfer effect in a variety of spin-based nanostructures such as the magnetic tunnel junction(MTJ),ferromagnet(FM)-quantum dot(QD)/FM-FM,double barrier MTJ,FM-marginal Fermi liquid-FM,FM-unconventional superconductor-FM(FUSF),quantum ring and optical spin-field-effect transistor.The magnetoresistances in those structures,spin accumulation effect in FM-QD-FM and FUSF systems,spin injection and spin filter into semiconductor,spin transfer effect,photon-assisted spin transport,magnonassisted tunneling,electron-electron interaction effect on spin transport,laser-controlled spin dynamics,and thermoelectrical spin transport are discussed.A brief review is presented, which includes the direct current, alternate current, electrical and thermoelectrical transport as well as spin transfer effect in a variety of spin-based nanostructures such as the magnetic tunnel junction (MTJ), ferromagnet(FM)-quantum dot (QD)/FM-FM, double barrier MTJ, FM-marginal Fermi liquid-FM, FM-unconventional superconductor-FM (FUSF), quantum ring and optical spin-field-effect transistor. The magnetoresistances in those structures, spin accumulation effect in FM-QD-FM and FUSF systems, spin injection and spin filter into semiconductor, spin transfer effect, photon-assisted spin transport, magnon- assisted tunneling, electron-electron interaction effect on spin transport, laser-controlled spin dynamics, and thermoelectrical spin transport are discussed.
关 键 词:SPINTRONICS magnetic tunnel junction spin transport MAGNETORESISTANCE spin transfer torque spin injection spin filter SPIN-VALVE SPIN-ORBIT
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