SPIN-VALVE

作品数：9被引量：3H指数：1
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Atomic origin of spin-valve magnetoresistance at the SrRuO3 grain boundary
《National Science Review》2020年第4期755-762,共8页Xujing Li Li Yin Zhengxun Lai Mei Wu Yu Sheng Lei Zhang Yuanwei Sun Shulin Chen Xiaomei Li Jingmin Zhang Yuehui Li Kaihui Liu Kaiyou Wang Dapeng Yu Xuedong Bai Wenbo Mi Peng Gao 
supported by the National Key R&D Program of China(2016YFA0300804);the National Equipment Program of China(ZDYZ2015-1);the National Natural Science Foundation of China(51672007 and 11974023);the Key-AreaResearch and Development Program of Guangdong Province(2018B030327001 and 2018B010109009);‘2011 Program’Peking-Tsinghua-IOP Collaborative Innovation Center of Quantum Matter;supported by the State Key Laboratory of Powder Metallurgy,Central South University,Changsha,China。
Defects exist ubiquitously in crystal materials, and usually exhibit a very different nature from the bulk matrix.Hence, their presence can have significant impacts on the properties of devices.Although it is well acc...
关键词：SPIN-VALVE magnetic defects electron microscopy GRAIN boundary 
Spin-valve magnetoresistance in single-phaseε-Fe2～3N film
《Science China(Information Sciences)》2019年第12期237-239,共3页Zhikuo TAO Lilei XU Henan FANG Lin CHEN Jiangwei CHEN 
supported by National Natural Science Foundation of China(Grant Nos.61574079,61106009,11704197);Open Foundation of Jiangsu Province Key Laboratory of Photonic and Electronic Materials Science and Technology(Grant No.2018JSGDXX016)
Dear editor,ε-Fe2~3N has been investigated as a potential candidate in spintronics devices[1].With the changing ratio of Fe:N,the magnetic behaviors and the spin transport properties of ε-Fe2~3N can be manipulated[2...
关键词：FILM tempera EDITOR 
Spin manipulations through electrical and thermoelectrical transport in magnetic tunnel junctions被引量：1
《Science China(Physics,Mechanics & Astronomy)》2013年第1期166-183,共18页ZHU ZhenGang SU Gang 
supported in part by the National Science Fund for Distinguished Young Scholars of China(Grant No. 10625419);the National Natural Science Foundation of China(Grant Nos. 90922033 and 10934008);the Ministry of Science and Technology of China (Grant Nos.2012CB932900 and 2013CB933401);the Chinese Academy of Sciences,China,the DFG and the state of Saxony-Anhalt,Germany
A brief review is presented,which includes the direct current,alternate current,electrical and thermoelectrical transport as well as spin transfer effect in a variety of spin-based nanostructures such as the magnetic ...
关键词：SPINTRONICS magnetic tunnel junction spin transport MAGNETORESISTANCE spin transfer torque spin injection spin filter SPIN-VALVE SPIN-ORBIT 
A micron-sized GMR sensor with a CoCrPt hard bias
《Journal of Semiconductors》2010年第2期19-22,共4页郑洋 曲炳郡 刘晰 韦丹 魏福林 任天令 刘理天 
A GMR（giant magneto-resistive） spin valve sensor for magnetic recording has been designed in an attempt to solve the Barkhausen noise problem in small-sized GMR sensors.In this study,the GMR ratio of the top-pinned ...
关键词：GMR SPIN-VALVE magnetic stabilization Barkhausen noise 
The magnetoresistive effect induced by stress in spin-valve structures被引量：1
《Chinese Physics B》2009年第6期2589-2595,共7页钱丽洁 许小勇 胡经国 
Project supported by the National Natural Science Foundation of China (Grant No 10347118);Natural Science Foundation of College of Jiangsu Province,China (Grant Nos 2006KJB140133 and 2007KJD140241)
Using a method of free energy minimization, this paper investigates the magnetization properties of a ferromagnetic （FM） monolayer and an FM/antiferromagnetic （AFM） bilayer under a stress field, respectively. It t...
关键词：MAGNETIZATION MAGNETORESISTANCE spin-valve structure stress field 
Spin-valve magnetoresistance in Co/Si/(Co/Cu/Co) multilayers
《中国有色金属学会会刊：英文版》2005年第6期1280-1284,共5页沈鸿烈 李冠雄 
A series of Co/Si/(Co/Cu/Co) multilayers and Co/Si/Co sandwiches were prepared by high vacuum (electron-beam) evaporation. It was found that a Si spacer (≥0.9nm) could greatly decrease the interlayer coupling in Co...
关键词：电子束蒸发 磁阻 多层膜 Co/Si Co/Cu/Co 
Pseudo-Spin-Valve Trilayer Using Amorphous CoNbZr Layer： Giant Magnetoresistance, Domain Structures and Potentials for Spin-Electronic Devices
《Chinese Physics Letters》2004年第5期941-944,共4页文岐业 张怀武 蒋向东 石玉 唐晓莉 张万里 
Interface reactions in film materials
《Journal of University of Science and Technology Beijing》2003年第5期1-8,共8页Fengwu Zhu, Zhonghai Thai, and Guanghua YuMaterials Science and Engineering School, University of Science and Technology Beijing, Beijing 100083, China 
This work was financially supported by the National Science Foundation of China (No.50271007) and Beijing (No.2012011)
Interface reaction (IR) is a frequently observed phenomenon in the study ofadvanced thin film materials. It is very important to study the reaction conditions at which IRhappens and then to suppress or make use of it,...
关键词：interface reaction spin-valve multilayers gate dielectric 
Micromagnetics and Signal Analysis of Shielded Spin-Valve Multilayer被引量：1
《Chinese Physics Letters》1996年第6期469-472,共4页ZHANG Huai-wu YANG Shi-qing LIU Ying-li WANG Hao-cai H.J.Kim 
In order to linearize a spin-valve giant magnetoresistance head,the exchanges layer sputtered at fringe area or a permanent magnet layer longitudinal biasing for domain stabilization based on a physical calculated mod...
关键词：STABILIZATION PERMANENT SIGNAL 
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