Atomic origin of spin-valve magnetoresistance at the SrRuO3 grain boundary  

作　　者：Xujing Li Li Yin Zhengxun Lai Mei Wu Yu Sheng Lei Zhang Yuanwei Sun Shulin Chen Xiaomei Li Jingmin Zhang Yuehui Li Kaihui Liu Kaiyou Wang Dapeng Yu Xuedong Bai Wenbo Mi Peng Gao 

机构地区：[1]Electron Microscopy Laboratory,School of Physics,Peking University,Beijing 100871,China [2]Beijing National Laboratory for Condensed Matter Physics,and Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China [3]Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology,School of Science,Tianjin University,Tianjin 300354,China [4]International Center for Quantum Materials,Peking University,Beijing 100871,China [5]State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [6]State Key Laboratory for Artificial Microstructure&Mesoscopic Physics,School of Physics,Peking University,Beijing 100871,China [7]Collaborative Innovation Centre of Quantum Matter,Beijing 100871,China [8]College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China [9]Shenzhen Institute for Quantum Science and Engineering,and Department of Physics,Southern University of Science and Technology,Shenzhen 518055,China

出　　处：《National Science Review》2020年第4期755-762,共8页国家科学评论（英文版）

基　　金：supported by the National Key R&D Program of China(2016YFA0300804);the National Equipment Program of China(ZDYZ2015-1);the National Natural Science Foundation of China(51672007 and 11974023);the Key-AreaResearch and Development Program of Guangdong Province(2018B030327001 and 2018B010109009);‘2011 Program’Peking-Tsinghua-IOP Collaborative Innovation Center of Quantum Matter;supported by the State Key Laboratory of Powder Metallurgy,Central South University,Changsha,China。

摘　　要：Defects exist ubiquitously in crystal materials, and usually exhibit a very different nature from the bulk matrix.Hence, their presence can have significant impacts on the properties of devices.Although it is well accepted that the properties of defects are determined by their unique atomic environments, the precise knowledge of such relationships is far from clear for most oxides because of the complexity of defects and difficulties in characterization.Here, we fabricate a 36.8°Sr RuO3 grain boundary of which the transport measurements show a spin-valve magnetoresistance.We identify its atomic arrangement, including oxygen,using scanning transmission electron microscopy and spectroscopy.Based on the as-obtained atomic structure, the density functional theory calculations suggest that the spin-valve magnetoresistance occurs because of dramatically reduced magnetic moments at the boundary.The ability to manipulate magnetic properties at the nanometer scale via defect control allows new strategies to design magnetic/electronic devices with low-dimensional magnetic order.

关 键 词：SPIN-VALVE magnetic defects electron microscopy GRAIN boundary 

分 类 号：O77[理学—晶体学]