升华法制备m面非极性AlN单晶体的研究  

Growth of Nonpolar m-plane AlN Single Crystals by Sublimation

作　　者：武红磊[1] 郑瑞生[1] 李萌萌[1] 闫征[1] 

机构地区：[1]深圳大学光电工程学院光电子器件与系统(教育部/广东省)重点实验室,深圳518060

出　　处：《人工晶体学报》2012年第6期1534-1537,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金重点项目(No.61136001);973前期研究专项(No.2010CB635115)

摘　　要：AlN晶体在c轴方向具有很强的自发和压电极化效应,影响了其器件的性能。生长高质量的非极性面AlN晶体材料是解决该问题的有效途径。本研究结合AlN晶体沿c轴择优生长的特点,使用自行设计的双区电阻加热生长装置,升华制备出尺寸为厘米级m面非极性AlN单晶体,并利用X射线衍射和能谱对样品进行测试分析。实验结果表明AlN单晶体的方向为(100),铝和氮原子比例为50.3%和49.7%,接近理想比例1∶1。最后,对m面非极性AlN单晶体的形成机理进行探讨。AlN materials and devices grown along the polar c-axis direction are affected by the strong spontaneous and piezoelectric polarization fields.To solve the question,it is necessary to grow nonpolar plane AlN crystals.The nonpolar m-plane AlN single crystals with the size about 1cm were grown by sublimation on a resistance heading furnace.The furnace designed by ourselves included two heaters,which heated on sublimation region and crystalline region,respectively.Then,AlN crystals were characterized by X-ray diffraction and energy dispersive spectrometer.The results show that the crystal is（100） oriented and consists of Al atoms（50.3at%） and N atoms（49.7at%）.At last,the formation mechanism of m-plane AlN was discussed.

关 键 词：升华 非极化 AlN晶体 m面 

分 类 号：O782[理学—晶体学]