应用电子辐照技术试制硅塑封快速二极管及性能研究  

Trial-produce and performance research of fast diode by using high-energy electron irradiation technology

作　　者：杭德生[1] 张治平[1] 张宇蔚 史晓东[1] 高宝山[1] 刘星[1] 

机构地区：[1]南京大学物理学院,南京210093 [2]无锡爱邦辐射技术有限公司,无锡214151

出　　处：《核技术》2013年第1期66-70,共5页Nuclear Techniques

摘　　要：介绍了采用高能12 MeV电子辐照效应来控制快速二极管少子寿命的方法,探讨了高能电子辐照对器件少子寿命τ、反向恢复时间trr和正向峰值压降VFM的影响,用高分辨率深能级瞬态仪(DLTS)测定和研究了引入缺陷能级的性质。应用研究结果表明,辐照快速二极管体内引入的缺陷能级是导致其电参数trr和VFM变化的直接原因,该技术可成功取代传统的掺金工艺,并具有τ控制精确,trr和VFM一致性好、重复性好、合格率高、工艺简便的优点,是一项具有发展前途的工艺技术。This paper reported the new technology on controlling the minority carrier life time of fast diode by using high energy 12 MeV electronic radiation, discussed the influence of high-energy electron irradiation to the device＇s reverse recovery time trr and positive peak pressure drop VFM, and studied the nature of the defects＇ energy level. Application results show that the defect level introduced by irradiation directly cause the VFM and trr＇S change, this technology can successfully replace the traditional technique of gold doped process, and have a lot of advantages such as high control precision, high consistency of trr and VrM, repeatability, high percent of pass and simple process, so this technology has promising future.

关 键 词：电子辐照 少子寿命 反向恢复时间 正向峰值压降 缺陷能级 

分 类 号：O571.33[理学—粒子物理与原子核物理] TN310.7[理学—物理]