冶金法n型多晶硅片磷、硼吸杂实验的研究  

Research on P/B Gettering of Upgraded Metallurgical Grade n-type Multicrystalline Silicon Wafers

作　　者：郑兰花[1] 徐进[1] 潘淼[2] 陈朝[2,3] 史珺 

机构地区：[1]厦门大学材料学院,上海201300 [2]厦门大学物理与机电工程学院,上海201300 [3]厦门大学能源研究院,厦门361005 [4]上海普罗新能源有限公司,上海201300

出　　处：《半导体光电》2012年第6期830-833,841,共5页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(61076056);福建省重大专项项目(2007HZ0005-2)

摘　　要：研究了冶金法n型多晶硅片磷吸杂、硼吸杂效果及其机理。研究发现,经1 000℃/4h磷吸杂后,硅片平均少子寿命从1.21μs提高到11.98μs;经950℃/1h硼吸杂后,平均少子寿命从1.52μs提升到10.74μs。两种吸杂处理后,硅片电阻率从0.2Ω.cm提高到0.5Ω.cm。结果表明,两种吸杂工艺使得硅片表面形成的重磷、重硼扩散层对金属杂质有较好的吸杂作用,从而减少载流子的复合中心,改善多晶硅片的性能。The effect and mechanism of phosphorus/boron gettering of upgraded metallurgical grade（UMG） n-type mc-Si wafers were systematically investigated.The results show that the minority carrier lifetime and resistivity are improved greatly after getterring treatment.The lifetime is increased from 1.21 μs to 11.98 μs and 10.74 μs by phosphorus gettering and boron gettering at 1 000 ℃ for 4 hours and 950 ℃ for 1 hour thermal treatment,respectively.It is concluded that the improvements are mainly due to the heavy phosphorous and boron diffusion layer formed on the surface,which can absorb the heavy metal impurities and decrease recombination centers.

关 键 词：磷吸杂 硼吸杂 n型多晶硅 少子寿命 

分 类 号：TM914.41[电气工程—电力电子与电力传动]