Simulation Study of the Electron and Hole Transport in a CNTFET  

作　　者：A.Bahari M.Amiri 

机构地区：[1]Department of Physics,University of Mazandaran

出　　处：《Communications in Theoretical Physics》2013年第1期121-124,共4页理论物理通讯（英文版）

摘　　要：In this work we have investigated electron and hole transport through zig zag carbon nanotubes by solving Boltzmann Transport Equation(BTE).We find that the mobility of electrons is rather greater than holes.Carbo nanotubes with longer diameter can carry higher current.Normally,transport of electrons(or holes) is dominated by scattering events,which relax the carrier momentum in an effort to bring the conducting material to equilibrium.

关 键 词：TRANSPORT NANOTUBES BTE 

分 类 号：O471[理学—半导体物理]