CCD拼接技术研究  

Research on CCD Butting Technology

作　　者：李作金[1] 杨亚生[1] 黄大恒 

机构地区：[1]重庆光电技术研究所,重庆永川632163

出　　处：《半导体光电》1991年第2期109-113,118,共6页Semiconductor Optoelectronics

摘　　要：为满足一些特殊领域对高位数线阵CCD的需要,我们用两个线阵2048位单列CCPD进行拼接,构成了4096位CCPD。用于拼接的2048位CCPD是采用埋沟三相三层多晶硅交迭栅埋沟结构。分析研究了器件的几何结构和性能参数。测试表明:器件光谱响应范围0.4～1.1μm,转移效率大于或等于99.99％,非均匀性小于或等于±8％。最后,对拼接CCD的实际意义进行了评述。In order to meet the requirements of some special area for linear array CCD with the high number of elements, we have developed 4096-element CCPD by means of butting two 2048-element single array CCPDs. The 2048-element CCPD to be butted uses three-phase three-level polysilicon overlapping gate buried channel structure. The device geometry and parameters are analysed, It is shown by measurement that the spectral response range is 0.4～1.1μm with the change transfer efficiency(η)≥99.99% and non-uniformity≤8%. Finally, the practical significance of CCD butting is described.

关 键 词：电荷耦合器件 拼接技术 CCD 

分 类 号：TN386.5[电子电信—物理电子学]