半导体表面晶体完整性的SEM电子通道花样研究  

Study on Crystal Perfection of Semiconductor Surfaces by SEM Electron Path Patterns

作　　者：邱素娟[1] 林奇全 

机构地区：[1]机电部第十三研究所,石家庄050051

出　　处：《Journal of Semiconductors》1991年第1期23-27,共5页半导体学报（英文版）

摘　　要：本文对各种GaAs晶体表面作了SEM电子通道技术测量,对测得的电子通道花样进行了结晶学注释,确定了评价晶体完整性的标准。可广泛用来检查和评估半导体表面的晶体完整性.Various GaAs crystal surfaces have been investigated with SEM electron passage patternmethod. Crystallography annotations have been made, and a standard to evaluate the crystalperfection has been defined. The method can be widely used for examining and appraisingthe crystal perfection of semiconductor surfaces.

关 键 词：GAAS晶体 SEM 电子通道像 

分 类 号：TN304.23[电子电信—物理电子学]