Si晶格常数超高精度传递测量中的标准晶体及制备  

Standard Crystal and it's Preparation Used in Crystal to Crystal Transfer of Si Parameter with Super High Accuracy

作　　者：高维滨[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《Journal of Semiconductors》1991年第7期435-440,共6页半导体学报（英文版）

摘　　要：用XROI(X-Ray/Optics Interferometry)法测得高精度的Si(220)面间距,22.5℃为192015.902±0.019 fm.并发展了晶格常数超高精度测量传递方法.本文根据传递测量的原理及测量技术阐明了对标准晶体制备的要求.文中给出了我们的标准晶体的尺寸,一个样品晶体的测量曲线.The particular specimen of Si crystal involved in the XROI (X-Ray/Optic Interferome-try) is not of a size suited to generate diffraction although with super high accuracy of (220)spacing distance 192015.902 fm at 22.5℃.In order to compare from one to the others withhigh precision the transfer method has Been developed. At present paper we according to the element and technology of transfer, describe howto design and preparate the standard crystal,and a pair of experimental rocking curves aregiven and the width at half hight of the central peaks are less than 0.05 sec.

关 键 词：硅晶格 测量 标准晶体 制造 

分 类 号：TN304.12[电子电信—物理电子学]