Ⅲ-Ⅴ族化合物中DX中心的新理论  

New Theory for DX centre in III-V Compound

作　　者：薛舫时[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《Journal of Semiconductors》1991年第8期453-460,共8页半导体学报（英文版）

摘　　要：本文提出了一种新的多能谷有效质量杂质电子态理论.它用导带中的Γ、X和L三个能谷的有效质量包络函数来描述杂质电子波函数,从而得出了杂质态的能谷属性.用此理论计算了GaAs_(1-x)P_x中Si施主的束缚能级和谐振能级.得到了Γ、L和Γ-L混和态三种能级,这些能级随组分比变化的关系同DX 中心的实验结果相吻合.在此基础上对DX 中心的一些实验现象给出了新的解释.A new many-valley effective mass impurity state theory is presented.The envelope func-tions for Γ, X and L valleys are used to describe the wave function for impurity states, and theenergy valley attribution of impurity states is obtained.By using this theory, the bound statesand resonant states for Si donor in GaAs_(1-x)P_x are calculated, where the Γ, L and Γ-L mi-xing states are obtained. The variation of these energy levels with the component ratio agreeswith the experimental results for DX centre,on which a new explanation for some experimen-tal phenomena of the DX centre is given.

关 键 词：化合物半导体 DX中心 理论 

分 类 号：TN304.23[电子电信—物理电子学]