MBE GaAs/GaP(001)异质外延层结构参数的X射线双晶衍射研究  

Structural Investigation by X-ray Double Crystal Diffraction of GaAs Epilayer Grown on GaP (001) Substrate by MBE

作　　者：王春艳[1] 王玉田[1] 孔梅影[1] 

机构地区：[1]中国科学院半导体研究所

出　　处：《Journal of Semiconductors》1991年第8期513-517,共5页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：本文利用X射线双晶衍射方法,研究了分子束外延(MBE)GaAs/CaP(001)异质外延层的结构参数——晶格常数、晶胞体积.根据X射线衍射动力学理论和运动学理论分别对双晶衍射摇摆曲线的峰角位置进行了修正,二者吻合很好.修正后的结果表明:X射线双晶衍射测量中会引入一定的晶胞体积缩小量,修正后外延层的晶胞体积略大于自由状态GaAs单晶的晶胞体积,这里根据Poisson关系对 GaAs/GaP外延层晶胞体积的增大进行了解释.The structural parameters including the lattice constant and the unit cell volume of GaAsepilayer on GaP(001) substrate have been studied by means of X-ray Double Crystal Diffrac-tion(XDCD).According to the X-ray dynamical theory and kinematical theory, the results ofXDCD measurements have been corrected, both results are consistent. The corrected results de-monstrate that the unit cell volume of GaAs/GaP (001) epilayer is enlarged,and it has beenclarified by Poisson's relationships.

关 键 词：双晶衍射 GaAs/GaP 外延层结构 MBE 

分 类 号：TN304.054[电子电信—物理电子学]