半导体超晶格界面附近的电荷转移  

Theoretical Study of Charge-Transfer near Interface Region in Semiconductor Superlattices

作　　者：王仁智[1] 黄美纯[1] 

机构地区：[1]厦门大学物理系,厦门361005

出　　处：《Journal of Semiconductors》1991年第9期530-535,共6页半导体学报（英文版）

摘　　要：本文采用LMTO能带从头计算方法,研究了(GaAs)_1(AlAs)_1(001)和(GaAs)_2(AlAs)_2(001)超晶格界面附近的电荷转移状况,分析了引起电荷转移的电负性和对称性因素,给出了电荷转移方向的判据.Using ab initio LMTO band calculations, we have investigated the charge-tran-sfer near the interface region in (GaAs)_1(AlAs)_1(001)and(GaAs)_2(AlAs)_2(001)super-lattices.It is found that the charge-transfer is dependent on both the atomic elect-ronegativity and the symmetry of atomic ligand species. A criterion of the charge-transfer direction is also given.

关 键 词：半导体超晶格 界面 电荷转移 

分 类 号：O471.4[理学—半导体物理]