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作 者:叶筱康[1] 王明霞[2] 朱鹏飞[2] 陆乐[1] 唐陈雷[1] 严查 易杰[1]
机构地区:[1]上海工程技术大学电子电气工程学院,上海201620 [2]上海工程技术大学基础教学学院,上海201620
出 处:《上海工程技术大学学报》2012年第4期370-373,共4页Journal of Shanghai University of Engineering Science
基 金:上海工程技术大学大学生创新活动计划资助项目(CS1121008)
摘 要:基于厚度达到毫米量级的双面金属包覆波导,采用波长为1 550 nm的近红外激光入射到该波导金属耦合层上,激发波导中的超高阶导模后,通过定点观测反射光强度的振荡变化,研究近红外激光在硅片产生的热效应.研究表明,耦合进波导的近红外激光被吸收,热效应导致硅片的折射率改变,激光热效应作用随激光功率增大而增强,并且激光热效应在50%工作点时作用最明显.Based on the millimeter scale double-sided metal-cladding waveguide,a near-infrared laser light with 1 550 nm wavelength was incidented into the metal coupling layer of the waveguide. By exciting the ultra high-order guided modes in the waveguide, the oscillating variation of reflected light intensity was measured at the fixed point. The thermal effect generated by the near-infrared laser in silicon chip was studied. The result shows that the near-infrared laser light coupling into the waveguide is absorbed, refractive index of the silicon chip is changed by thermal effects. Laser thermal effect is enhancing with increased laser power,and the effect is the most obvious at 50% of operating point.
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