纳秒激光与硅电池片光电转换效率变化及机理初步分析  

Nanosecond laser and mechanism primary analysis of Si-cell optoeletric conversion efficiency

作　　者：胡传炘[1] 胡家晖[2] 黄继强[3] 刘颖[4] 沈忱[4] 

机构地区：[1]北京工业大学材料科学与工程学院,北京100124 [2]国务院国有资产监督管理委员会机关服务中心,北京100053 [3]北京石油化工学院光机电装备技术北京市重点实验室,北京102617 [4]北京工业大学环境及能源学院,北京100124

出　　处：《红外与激光工程》2012年第12期3226-3229,共4页Infrared and Laser Engineering

摘　　要：描述了用6ns波长为1064nm的激光在SF6中作用于硅表面产生的锥形微观结构过程，测试了经激光处理及未经激光处理之硅晶片制成的硅电池光电转换效率的变化。实验显示，激光处理后的晶片所制电池其光电转换效率提高，其增加量为未经激光处理的电池效率的10％一15％，对这种变化进行了初步机理分析，认为可能与硅逾量电子结合能和Fermi能级有关。激光处理硅晶片的应用，也会进一步改善硅电池制作工艺。The conical microstructures formed on the train of 6 ns laser pulses with a wavelength of conversion efficiency of the sample which is laser surface of Si-wafer in SF6 and upon irradiation with 1 064 nm was described. The Si cell optoelectric treatment （sample 1） and without laser treatment （sample 2） compared with sample 1 were measured, the conversion efficiency of sample 2 increased up to 10%-15%. Primary analysis the mechanism of the changes, it possible relates to binding energy of surfeit electron and Fermi level. Find application of the Si-wafer laser treatment the Si cell technology can further improve.

关 键 词：纳秒激光 硅光电池 光电转换效率 

分 类 号：TN249[电子电信—物理电子学]