Sn掺杂对ZnO压敏变阻器电学性能的影响  

Effect of Sn Doping on the Electrical Properties of ZnO Varistor

作　　者：杨明珠[1] 牟海维[1] 吕树臣[2] 

机构地区：[1]东北石油大学电子科学学院,大庆163318 [2]哈尔滨师范大学物理系,哈尔滨150001

出　　处：《硅酸盐通报》2013年第1期149-152,共4页Bulletin of the Chinese Ceramic Society

基　　金：国家自然科学基金(51101027);黑龙江省普通高等学校青年学术骨干支持计划(1252G008)

摘　　要：本文采用沉淀法以SnCl2.H2O代替SbCl3制备了ZnO压敏变阻器。分析了SnO2含量对变阻器电学性能的影响。随着SnO2含量的增加,漏电流和压敏电压明显增大;而非线性系数在SnO2掺杂量达到3.0 mol%时达到极大值。通过适当的掺杂,得到了漏电流为0.08μA,非线性系数为80.3,压敏电压为1006.7 V1mA/mm性能良好的ZnO变阻器。Substituting the traditional additive SbCl3 with SnCl2 · H/O, ZnO varistor was prepared by precipitation method and the electrical properties were analyzed. With the increase of SnO2 content, the leakage current and the breakdown voltage increase obviously. But the nonlinear coefficient increases to a maximum when the content of SnO2 is 3.0 mol%. After proper doping of SnO2, the ZnO varistor exhibits excellent electrical characteristics. The leakage current is 0.08 uA, the nonlinear coefficient is 80.3, and the breakdown voltage is 1006.7 V 1mA/mmA.

关 键 词：ZNO变阻器 Sn掺杂 电性能 

分 类 号：TN304[电子电信—物理电子学]