H_2流量对直流磁控溅射低温沉积ZnO:Al薄膜结构与性能的影响  

EFFECTS OF H_2 FLUX ON THE STRUCTURE AND PROPERTIES OF ZnO:Al THIN FILMS DEPOSITED BY DC MAGNETRON SPUTTERING AT LOW TEMPERATURE

作　　者：赵联波[1] 赖延清[1] 刘芳洋[1] 张坤[1] 邹忠[1] 李劼[1] 刘业翔[1] 

机构地区：[1]中南大学冶金科学与工程学院,长沙410083

出　　处：《太阳能学报》2013年第1期28-33,共6页Acta Energiae Solaris Sinica

摘　　要：在Ar和H2的混合气氛下采用直流磁控溅射在玻璃衬底上低温沉积Al掺杂ZnO,即ZnO∶Al透明导电薄膜,研究H2流量(0～10sccm)对薄膜结构、形貌、光学和电学性能的影响。结果表明:不同H2流量下制备的ZnO∶Al薄膜均为高度C轴取向的六角纤锌矿结构,溅射过程中通入适量的H2能改善ZnO∶Al薄膜的结晶质量和表面形貌;所有薄膜在400～900nm范围内的平均透过率均高于85%;随着H2流量的增大,薄膜的载流子浓度升高,电阻率减小,达到10-4Ω.cm数量级。Al-doped ZnO（ZnO： A1） transparent conductive thin films have been prepared on glass substrates by di- rect current magnetron sputtering in Ar ＋ H2 mix ambient at low temperature. The effects of H2 flux（0 - 10seem） on structure, surface, optical and electrical properties were investigated. The results indicate that all ZnO： AI thin films obtained under various Ha flux show hexagonal structure and highly C axial growth orientation. Crystallization and surface topography was improved by mixing defined amount H2 in sputtering. The optical transmittance of all ZnO： A1 thin films is higher than 85% in the wavelength range 400 to 900nm. With the increase of H2 flux, the carrier concentration rose obviously and the electrical resistivity descended to 10-4Ω.cm.

关 键 词：ZNO Al薄膜 磁控溅射 H2流量 电阻率 透过率 

分 类 号：O782[理学—晶体学]