衬底温度对PLD法沉积CdS及ZnS薄膜材料的影响  

TEMPERATURE DEPENDENCE OF PROPERTIES OF CdS、ZnS FILMS PREPARED BY PLD METHOD

作　　者：胡居广[1,2] 李启文[1] 郑彬[1] 汤华斌[1] 王培[1] 罗仲宽[3] 曹慧群[3] 林晓东[1,2] 

机构地区：[1]深圳大学物理科学与技术学院,深圳518060 [2]深圳市传感器技术重点实验室,深圳518060 [3]深圳大学化学与化工学院,深圳518060

出　　处：《太阳能学报》2013年第1期34-38,共5页Acta Energiae Solaris Sinica

基　　金：深圳市传感器技术重点实验室开放基金(SST200902);深圳市科技研发基金(JCYJ20120613112423982;JC201005280419A);广东省大学生创新实验项目(1059010006)

摘　　要：以ITO玻璃为衬底,利用脉冲激光沉积(PLD)法在温度为50、200和400℃下制备了CdS、ZnS薄膜。测量分析了温度对CdS及ZnS薄膜的透射光谱特性、光学带隙、Raman光谱特性等的影响。结果显示,在实验温度范围内:①ZnS薄膜比CdS薄膜透射性能好,光学带隙大;②ZnS薄膜的Raman光谱复杂,Raman特征峰较弱;CdS薄膜的Raman特征峰明显;③随温度升高,CdS与ZnS相比禁带宽度增加明显、Raman特征峰增高变窄。对此现象进行了解释,为利用CdS或ZnS薄膜作为CIGS薄膜太阳电池缓冲层提供了参考。CdS and ZnS films were prepared on ITO glass substrate by pulsed laser deposition （PLD） method at 50℃, 200℃ and 400℃. Transmission spectrum and Raman spectrum were measured and analyzed. Influences of temperature on the CdS, ZnS transmission spectral characteristics, optical band gap, Raman spectral characteristics were studied. The results show, （ 1 ） The transmission of ZnS films is higher than that of CdS, and ZnS has larger optical band gap; （2） ZnS films show complex Raman spectrum and weak Raman peaks, while CdS films show dis- tinct Raman peaks; （3） With increasing temperature, CdS band gap increased significantly in comparison to that of ZnS, Raman peak became higher and narrower. These phenomena were explained. This work is for preparing CdS or ZnS films as buffer layer for CIGS solar ceils.

关 键 词：脉冲激光沉积 CDS薄膜 ZNS薄膜 铜铟镓硒太阳电池缓冲层 

分 类 号：O782[理学—晶体学] TK514[动力工程及工程热物理—热能工程]