YAG激光频率对a:H-Si薄膜微晶化的影响  

Influence of YAG Laser Frequency on a:H-Si Thin Films Micro-Crystallization

作　　者：张竹青[1] 王强[2] 花国然[1] 周雨薇[2] 

机构地区：[1]南通大学机械工程学院,江苏南通226019 [2]南通大学电子信息学院,江苏南通226019

出　　处：《激光与光电子学进展》2013年第2期173-177,共5页Laser & Optoelectronics Progress

基　　金：国家自然科学基金青年科学基金(51205212);江苏省自然科学基金(BK2008184);南通大学研究生科技创新计划(YKC12064);江苏省高校大学生创新训练计划(2012JSSPITP1512)资助课题

摘　　要：研究了一种氢化非晶硅(a:H-Si)薄膜微晶化的激光控制工艺方法。在保持脉宽、激光功率和激光光斑大小一致的情况下,分别应用4、8、10、12、15Hz频率YAG激光对a:H-Si/晶体硅(c-Si)结构中的a:H-Si薄膜进行退火处理,探索了YAG激光脉冲频率对a:H-Si薄膜微晶化的影响。用X射线衍射仪(XRD)和原子力显微镜(AFM)对a:H-Si薄膜晶化后的物相结构和表面形貌进行了分析。实验结果表明,随着激光频率从4Hz增加到10Hz,a:H-Si薄膜晶化后的晶粒尺寸变大;随着激光频率从10Hz增加到15Hz,a:H-Si薄膜晶化后的晶粒尺寸逐步变小。脉冲频率为10Hz激光退火后的a:H-Si薄膜的晶化晶粒平均尺寸最大,约45nm。a:H-Si薄膜的表面电阻率随激光频率的增加总体呈下降趋势,晶化后晶粒尺寸最大的a:H-Si薄膜的表面电阻率最低。The laser-controlled micro-crystallization technology for hydrogenated amorphous silicon a：H-Si thin films is studied. The a： H-Si thin films on crystalline silicon （c-Si） are annealed by YAG laser with the frequencies of 4, 8, 10, 12, 15 Hz, while keeping the laser power, pulse width and facula unchanged. The influence of laser frequency on a： H-Si thin film crystallization is studied. The analysis of a： H-Si thin film microstructure and surface morphology is conducted using X-ray diffractometer （XRD） and atomic force microscope （AFM）. The results show that the grain size of the a： H-Si thin film becomes larger with the laser frequency increasing from 4 Hz to 10 Hz, and decreases with the laser frequency keeping increasing from 10 Hz to 15 Hz. The maximum average grain size reaches 45 nm in the film annealed by the 10 Hz YAG laser. The sheet resistance of the film generally decreases with the laser frequency in creasing, while the film with the largest grain size obtains the lowest sheet resistance.

关 键 词：激光技术 YAG激光器 氢化非晶硅薄膜 激光脉冲频率 

分 类 号：TN249[电子电信—物理电子学]