考虑自热效应的互连线功耗优化模型  

A novel interconnect-optimal power model considering self-heating effect

作　　者：张岩[1] 董刚[1] 杨银堂[1] 王宁[1] 王凤娟[1] 刘晓贤[1] 

机构地区：[1]西安电子科技大学,微电子研究所宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《物理学报》2013年第1期349-355,共7页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60606006);陕西省科技统筹创新工程计划(批准号:2011KTCQ01-19);国防预研基金(批准号:9140A23060111)资助的课题~~

摘　　要：基于互连线的分布式功耗模型,考虑自热效应的同时采用非均匀互连线结构,提出了一种基于延时、带宽、面积、最小线宽和最小线间距约束的互连动态功耗优化模型.分别在90和65nm互补金属氧化物半导体工艺节点下验证了功耗优化模型的有效性,在工艺约束下同时不牺牲延时、带宽和面积所提模型能够降低高达35%互连线功耗.该模型适用于片上网络构架中大型互连路由结构和时钟网络优化设计.Based on the distributed interconnect power model, a novel dynamic power model is presented in this paper, in which a non- uniform interconnection structure is adopted. This model takes into account the self-heating effect and is constrained by delay, bandwidth, area, minimum interconnect width and minimum interconnect space. The validity of the proposed model is verified by 90 nm and 65 nm complementary metal-oxide semiconductor technology. The results indicate that the proposed model can cause a power consumption reduction as high as 35%, and yet the delay, area, and bandwidth are not deteriorated, when compared with the conventional power model. The proposed optimal model can be used for designing large scale interconnect router and clock network in network-on-chip structure.

关 键 词：分布式互连 功耗优化模型 自热效应 非均匀互连线 

分 类 号：TN405.97[电子电信—微电子学与固体电子学]