贮存电荷对非线性逻辑门开关通断速度的影响  

Effect of Store Charge on the Nonlinear Transistor Switch Vilocity

作　　者：郭愉生[1] 

机构地区：[1]华中理工大学汉口分校基础课部,武汉430012

出　　处：《江汉大学学报》2000年第3期62-68,共7页Journal of Jianghan University

摘　　要：从Ebers－Moll方程组出发，建立在矩形脉冲激励下的BJT反相器的非线性耦合微分方程．介绍了MATH程序语言在求解逻辑门开关电路的非线性耦合微分方程中的具体应用.说明中性区和空间电荷层内贮存电荷对逻辑门开关速度的影响．An application of MATH on deducing the nonlinear coupling differential equations of the BJT-Not gate, which is stimulated by rectangle pulse signal and is developed from Ebers-Moll equations is presented. The effect of storage charge on the nonlinear transistor switch vilocity in neutrality section and charge tier space are also disscussed.

关 键 词：逻辑门开关 非线性 通断速度 贮存电荷 E-M模型 

分 类 号：TP17[自动化与计算机技术—控制理论与控制工程]