半绝缘砷化镓的光淬灭对TSC的影响  

The Influence of photoquenching on TSC spectra in semi-insulating GaAs

作　　者：王良[1] 郑庆瑜[1] 孙毅之[1] 

机构地区：[1]天津电子材料研究所,天津300192

出　　处：《半导体杂志》2000年第2期1-6,共6页

摘　　要：实验研究了SI-GaAs材料中的EL2能级光淬灭对TSC谱的影响。EL2能级显著光淬灭后 ,TSC谱发生了明显的变化。一些TSC峰的高度明显降低甚至消失 ,在低温端TSC谱出现一些新的峰。The influence of EL2 photoquenching on thermly stimulated current spectra is studied in undoped semi-insulating GaAs. A obvious change in TSC spectra is observed after photoquenching. Serveral dominant TSC peaks is gradually decreased or disappeared as the photoquenching of EL2 occurred. The new peaks appear in low temperature region.

关 键 词：热激电流 光淬灭 砷化镓 

分 类 号：TN304.23[电子电信—物理电子学]