温度及扩散时间对CVD法制备高硅钢的影响  

Influence of Temperature and Diffusion Time on Manufacturing Procedure of High Silicon Steel by CVD Method

作　　者：王旭[1] 张帆 朱合范[1] 潘红良[1] 

机构地区：[1]华东理工大学,上海200237 [2]萨省大学

出　　处：《表面技术》2013年第1期85-87,共3页Surface Technology

摘　　要：采用CVD法制备6.5%Si高硅钢,介绍了具体的制备工艺过程,研究了温度对渗硅速率和试样质量减轻的影响,同时分析了扩散时间对高硅钢中硅分布的影响。结果表明:在CVD反应过程中,反应温度高于1050℃将大大提高渗硅速率,但当温度大于1200℃后,渗硅速率趋于稳定;渗硅后,试样会减轻、减薄,随着温度升高,试样质量减轻的速率逐渐增大,在1200℃左右趋于稳定;扩散时间越长,硅分布越均匀,结合制备效率进行考虑,满足Δw表-中/b≤5的时间为适宜的扩散时间。6.5% Si high silicon steel was manufactured by using CVD method and the process was introduced, the influence of temperature on the siliconizing rate and quality reducing rate, diffusion time on silicon distribution were investigated. Results as follows： the siliconizing rate will increase quickly when the temperature is higher than 1050℃, but the siliconizing rate will become steadily as the temperature up to 1200℃ ; The quality reducing rate will increase with the elevating of temperature and the rate will become steadily when the temperature is higher than 1200 ℃ ; The silicon will be well-distributed as the diffusion time is very sufficient, but it will be the highest efficient time when the Aw表-中b≤5.

关 键 词：6 5%Si高硅钢 CVD 温度 扩散时间 

分 类 号：TG174.445[金属学及工艺—金属表面处理]