室温下石墨烯的霍尔效应实验研究  

Experimental Research on Hall Effect of Graphene at Room-temperature

作　　者：安楠[1] 白浪[1] 李小俊[1] 李渭龙[1] 任兆玉[1] 

机构地区：[1]西北大学光子学与光子技术研究所 陕西省光电技术与功能材料省部共建国家重点实验室培育基地,陕西西安710069

出　　处：《发光学报》2013年第1期45-48,共4页Chinese Journal of Luminescence

基　　金：国家自然科学基金(10974152,611770959,61275105);陕西省教育厅科研计划(08JZ68,2010JS111,12JK0519)资助项目

摘　　要：对用化学气相沉积法(CVD)研制的长、宽均为1.23 cm,厚度为3个原子层尺寸的石墨烯样品,进行了室温下的霍尔效应相关研究。实验中电极与石墨烯之间有良好的欧姆接触。通过范德堡法测量了样品在磁场强度为0.353 T,不同电流强度下的霍尔电压,并对结果进行处理分析,得到石墨烯的霍尔系数RH=7.00×10-7m3/C、载流子浓度n=10.52×1024/m3、霍尔元件乘积灵敏度KH=6.87×102m2/C。The grapheme samples were deposited on glass substrates by chemical vapor deposition（CVD）.Both the length and width of graphene samples were 1.23 cm,and the thickness was 3 atomic layer thickness setting scales.The Hall effects at room temperature of the samples were studied.There was good ohmic contact between the sample and the electrode.By using van der Pauw method,the Hall voltage of the samples were measured under the magnetic field strength 0.353 T and different electric currents.The calculating results show that the graphene Hall coefficient RH is 7.00×10-7 m3/C,the carrier concentration n is 10.52×1024/m3 and the Hall element production sensitivity KH is 6.87×102 m2/C.

关 键 词：石墨烯 测量 霍尔效应 

分 类 号：O471.1[理学—半导体物理]