Ga30Sb70/Sb80Te20纳米复合多层薄膜的相变特性研究  

Phase-change behaviors in Ga_(30)Sb_(70)/Sb_(80)Te_(20) nanocomposite multilayer films

作　　者：汪昌州[1,2] 朱伟玲[3] 翟继卫[1] 赖天树[3] 

机构地区：[1]同济大学功能材料研究所,上海200092 [2]中国科学院上海高等研究院薄膜光电工程技术研究中心,上海201210 [3]中山大学物理科学与工程技术学院,光电材料与技术国家重点实验室,广州510275

出　　处：《物理学报》2013年第3期270-276,共7页Acta Physica Sinica

基　　金：国家高技术研究发展计划(批准号:2008AA031402);国家自然科学基金(批准号:51202148);上海市纳米科技专项基金(批准号:1052nm07200)资助~~

摘　　要：采用磁控二靶(Ga(30)Sb(70)和Sb(80)Te(20))交替溅射方法制备了新型Ga(30)Sb(70)/Sb(80)Te(20)纳米复合多层薄膜,对多层薄膜周期中Ga(30)Sb(70)层厚度对相变特性的影响进行了研究.结果表明,多层薄膜的结晶温度可以通过周期中Ga(30)Sb(70)层厚度进行调节,且随着Ga30Sb70层厚度的增加而升高.Ga(30)Sb(70)/Sb(80)Te(20)纳米复合多层薄膜的光学带隙随Ga(30)Sb(70)层厚度的增加而增大.采用皮秒激光脉冲抽运光探测技术研究了多层薄膜的瞬态结晶动力学过程,利用不同能量密度的皮秒激光脉冲可以实现Ga(30)Sb(70)/Sb(80)Te(20)多层薄膜非晶态和晶态的可逆转变.Novel Ga30Sb70/Sb80Te20 nanocomposite multilayer films are prepared by alternate sputter deposition of two independent targets of Ga30Sb70 and Sb80Te20 in a magnetron sputtering system. The influence of layer thickness of Ga30Sb70 on the phase-change behavior of Ga30Sb70/Sb80Te20 multilayer film is investigated. The results show that the crystallization temperature can be controlled by adjusting the layer thickness of Ga30Sb70. The crystallization temperature increases with increasing the layer thickness of Ga30Sb70. The optical band gap is also found to increase with increasing in the layer thickness of Ga30Sb70. Transient crystallization dynamics of Ga30Sb70/Sb80Te20 multilayer film induced by single picosecond laser pulse pumping, is studied. The reversible phase transition between amorphous and crystalline state can be achieved by using picosecond laser pulses with different fluences.

关 键 词：纳米复合 多层薄膜 相变 光学特性 

分 类 号：O484.43[理学—固体物理]