N离子注入富氧ZnO薄膜的p型导电及拉曼特性研究  

Study on the p-type conductivities and Raman scattering properties of N^+ ion-implanted O-rich ZnO thin films

作　　者：杨天勇 孔春阳 阮海波[2] 秦国平[1,2] 李万俊[1,2] 梁薇薇 孟祥丹 赵永红 方亮[2] 崔玉亭 

机构地区：[1]重庆市光电功能材料重点实验室,重庆400047 [2]重庆大学物理学院,重庆400030

出　　处：《物理学报》2013年第3期382-386,共5页Acta Physica Sinica

基　　金：重庆市自然科学基金(批准号:CSTC.2011BA4031);国家自然科学基金(批准号:1075314)资助~~

摘　　要：采用射频磁控溅射法在富氧环境下制备ZnO薄膜,继而结合N离子注入及热退火实现薄膜的N掺杂及p型转变,借助霍尔测试和拉曼光谱研究了N离子注入富氧ZnO薄膜的p型导电及拉曼特性.结果表明,在600C温度下退火120min可获得性能较优的p-ZnO:N薄膜,其空穴浓度约为2.527×10(17)cm(-3).N离子注入ZnO引入了三个附加拉曼振动模,分别位于274.2,506.7和640.4cm(-1).结合电学及拉曼光谱的分析发现,退火过程中施主缺陷与N受主之间的相互作用对p-ZnO的形成产生重要影响.The p-type N doped ZnO thin films are fabricated using radio-frequency magnetron sputtering technique in O-rich growth con-dition together with the direct N＋ion-implantation and annealing. The conductivities and Raman scattering properties of the samples are studied by Hall measurements and Raman spectra respectively. Hall measurements indicate that the optimal p-type ZnO film can be obtained when the sample is annealed at 600？C for 120 min in N2 ambience, and its hole concentration is about 2.527×1017 cm-3. N＋-implantation induces three additional vibrational modes in ZnO, which are located at 274.2, 506.7 and 640.4 cm-1 respectively. In the process of the annealing, by comparing the electrical properties and Raman speetra of the samples, we find that the competition between intrinsic donor defects and the activation of N acceptors plays a crucial role in the p-type formation of ZnO：N films during annealing.

关 键 词：富氧ZnO 离子注入 p型导电 拉曼光谱 

分 类 号：TN304.21[电子电信—物理电子学]