蓝宝石衬底上生长的Ga_(2+x)O_(3-x)薄膜的结构分析  

Structrual analyses of Ga_(2+x)O_(3-x) thin films grown on sapphire substrates

作　　者：潘惠平[1,2] 成枫锋[1] 李琳[2] 洪瑞华[3] 姚淑德[1] 

机构地区：[1]北京大学,核物理与核技术国家重点实验室,北京100871 [2]黔南民族师范学院物理与电子科学系,都匀558000 [3]台湾国立中兴大学精密工程研究所,中国台中40227

出　　处：《物理学报》2013年第4期509-514,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:10875004,11005005);国家重点基础研究发展计划(批准号:2010CB832904)资助的课题~~

摘　　要：利用卢瑟夫背散射/沟道技术和金属有机化学气相沉积方法,对蓝宝石衬底上在不同温度、压强下生长的Ga2+xO3-x薄膜进行结构和结晶品质的测量与分析;并结合高分辨X射线衍射分析技术,通过对其对称(02)面的θ—2θ及ω扫描,确定了其结构类型及结晶品质.实验表明:在相同的生长温度(500°C)下,结晶品质随压强的下降而变好,生长压强为15Torr(1Torr=133.322Pa)的样品其结晶品质最好,沿轴入射之比χmin值为14.5%;在相同的生长压强(15Torr)下,结晶品质受生长温度的影响不大,所以,生长温度不是改变结晶品质的主要因素;此外,在相同的生长条件下制备的样品,分别经过700,800和900°C退火后,其结晶品质随退火温度的变化而变化.退火温度为800°C的样品的结晶品质最好,χmin值为11.1%;当退火温度达到900°C时,样品部分分解;经热处理的样品其X射线衍射谱中有一个强的Ga2O3(02)面衍射峰,其半峰全宽为0.5,表明该Ga2O3外延膜是(02)择优取向.Ga2＋xO3-x thin films grown on sapphire substrates by metal-organic chemical vapor deposition under different conditions （temperature pressure） are studied by rutherford backscattering spectrometry/channeling. The structural information and crystalline quality are further investigated by high resolution X-ray diffraction （HR-XRD）. The results suggest that at the same growth-temperature the crystalline quality is improved with pressure decreasing, while χmin reaches a minimum 14.5% when the pressure decreases to 15 Torr （1 Torr=133.322 Pa）. Then if the pressure is kept at 15 Torr, all films present similar crystalline qualities, which hints that the temperature is not a chief factor. Moreover, films prepared under the same condition are annealed at different temperatures： 700, 800 and 900 ℃. At first the crystalline quality is improved by increasing the annealing temperature and reaches a best χmin of 11.1%. Nevertheless, as the annealing temperature is further increased, the samples become decomposed. XRD spectra of annealed samples each reveal a strong peak of Ga2O3 （402）, indicating that the epitaxial layer has a preferred orientation （402）.

关 键 词：氧化镓 卢瑟夫背散射 X射线衍射 结晶品质 

分 类 号：TN304.055[电子电信—物理电子学]