直流电弧等离子体喷射法制备金刚石薄膜  

Preparation of Diamond Films With Direct Current Arc Plasma Jet

作　　者：李荣志[1] 阎震[1] 钟生东 张忠廉[1] 朱鹤孙[1] 

机构地区：[1]北京理工大学材料科学研究中心

出　　处：《北京理工大学学报》1991年第2期48-52,共5页Transactions of Beijing Institute of Technology

基　　金：国家新材料专家委员会(NAMCC)资助项目

摘　　要：设计了一种以较高速度合成金刚石薄膜的装置。这种装置是在阴极和阳极间用甲烷氢气及氩气产生高密度等离子体射流。等离子体射流以高速度喷射于被冷却的基底上,从而形成金刚石薄膜。An apparatus is presented in this paper , designed for the synthesis of diamond films at a rather high deposition rate . With this apparatus , a plasma jet consisting of a mixture of methane , hydrogen and argon is realized at a high density between the anode and cathode . Diamond film is synthesized while the plasma flow rushes to a cooled substrate at high speed .

关 键 词：金刚石 薄膜 等离子体喷射 

分 类 号：TN304.18[电子电信—物理电子学]