Microstructure and properties of electronic packaging box with high silicon aluminum-base alloy by semi-solid thixoforming  被引量:10

半固态触变成形制备高硅铝基电子封装盒体的组织与性能(英文)

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作  者:贾琪瑾[1] 刘俊友[1] 李艳霞[1,2] 王文韶[1] 

机构地区:[1]北京科技大学材料科学与工程学院,北京100083 [2]北华航天工业学院材料系,廊坊065000

出  处:《Transactions of Nonferrous Metals Society of China》2013年第1期80-85,共6页中国有色金属学报(英文版)

摘  要:The electronic packaging box with high silicon aluminum-base alloy was prepared by semi-solid thixoforming technique.The flow characteristic of the Si phase was analyzed.The microstructures of different parts of the box were observed by optical microscopy and scanning electron microscopy,and the thermophysical and mechanical properties of the box were tested.The results show that there exists the segregation phenomenon between the primary Si phase and the liquid phase during thixoforming,the liquid phase flows from the box,and the primary Si phase accumulates at the bottom of the box.The volume fraction of primary Si phase decreases gradually from the bottom to the walls.Accordingly,the thermal conductivities of bottom center and walls are 107.6 and 131.5 W/(m·K),the coefficients of thermal expansion(CTE) are 7.9×10-6 and 10.6×10-6 K-1,respectively.The flexural strength increases slightly from 167 to 180 MPa.The microstructures and properties of the box show gradient distribution overall.利用半固态触变成形工艺制备高硅铝电子封装盒体,分析盒体中Si相的分布特征。采用金相显微镜和扫描电镜观察盒体不同部位的显微组织,并测定其热物理性能及力学性能。结果表明,Al-25%Si(质量分数)合金在半固态触变成形中Si相和液相产生分离流动,液相从盒体中流出,Si相在盒体中聚集,其体积分数从盒体底面向四壁逐渐降低。盒体底面中心和四壁的热导率分别为107.6和131.5W/(m·K),热膨胀系数分别为7.9×10-6和10.6×10-6K,抗弯强度由167MPa缓慢增加至180MPa。组织和性能呈现梯度变化。

关 键 词:high silicon aluminum-base alloy electronic packaging semi-solid thixoforming thermal conductivity coefficient of thermal expansion 

分 类 号:TN405[电子电信—微电子学与固体电子学]

 

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