磁控溅射法制备Half-Heusler化合物半导体TiCoSb薄膜  

Preparation of Half-Heusler Compound Semiconductor TiCoSb Thin Film by Magnetron Sputtering

作　　者：张敏[1] 秦娟[1] 孙钮一[1] 张小丽[1] 史伟民[1] 

机构地区：[1]上海大学材料科学与工程学院,上海200072

出　　处：《上海大学学报（自然科学版）》2013年第1期71-74,共4页Journal of Shanghai University:Natural Science Edition

基　　金：上海市重点学科建设资助项目(S30107)

摘　　要：设计一种特别的TiCoSb复合靶材,通过调节各元素在复合靶材上所占面积的大小,可以方便地调节薄膜的成分.采用这种靶材,利用直流磁控溅射和快速退火成功制备单一物相的多晶TiCoSb薄膜;采用X射线衍射(X-raydiffraction,XRD)和原子力显微镜(atomic force microscopy,AFM)分析TiCoSb薄膜的结构和表面形貌;利用Hall测试仪初步研究薄膜的电学性质.结果表明,所制备的TiCoSb薄膜对石英玻璃衬底具有良好的粘附力,薄膜均匀致密.经600℃,5 min退火的TiCoSb薄膜的结晶质量较好,薄膜的室温电导率为13.7 S/cm.A special TiCoSb composite target is designed with the convenience of adjusting film composition by varying the area of each element in the target. Using this target, polycrystalline TiCoSb thin films with single phase are successfully fabricated through direct current magnetron sputtering and rapid thermal annealing. The film structure and surface morphology of TiCoSb thin films are analyzed with XRD （X-ray diffraction） and AFM （atomic force microscopy）. The electrical properties of the films are studied by Hall effect measurements. The results show that the TiCoSb thin films are uniform and dense, and have good adhension to the quartz glass substrate. The TiCoSb thin film annealed at 600 ℃ for 5 min has better crystalline quality than those annealed at lower temperatures, having conductivity of 13.7 S/cm at room temperature.

关 键 词：热电 half-Heusler 磁控溅射 TiCoSb薄膜 退火 

分 类 号：O484.4[理学—固体物理]