FeCoSiB薄膜在应力调控下的微磁模拟  

Micromagnetic Simulation of the Effects of the Stress on FeCoSiB Film

作　　者：奉建华[1] 翟亚红[1] 杨成韬[1] 张彩虹[1] 张万里[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《压电与声光》2013年第1期129-131,135,共4页Piezoelectrics & Acoustooptics

基　　金：国家重点基础研究发展计划(“九七三”)基金资助项目(51613Z)

摘　　要：从微磁学理论出发,利用微磁学软件OOMMF,从理论上研究不同大小、方向的应力对FeCoSiB非晶磁弹性薄膜图形化单元磁畴、剩磁、矫顽力等磁性特性的影响。结果表明,磁滞回线明显取决于所施加的应力;且剩磁和矫顽力对应力的大小、方向的敏感度都很高。剩磁随应力以0.09/400MPa的梯度线性变化;矫顽力随应力以2mT/50MPa的梯度线性变化。Based upon micromagnetics theory, the effects of the stress with different strength and direction on magnetic properties （like magnetic moments, remanence and coercivity） of the magnetoelastic films were investigated theoretically by micromagnetic software OOMMF. The results show that the shapes of the hysteresis loops are significantly dependent on the applied stresswhats more,remanence and coercivity are highly sensitive to the stress, including strength and direction. The linear change of remanence to stress with the grads of 0.09/400 MPa,while the linear change of coercivity to stress with the grads of 2 roT/50 MPa.

关 键 词：微磁学模拟 剩磁 矫顽力 应力 

分 类 号：TM271[一般工业技术—材料科学与工程]