金属磁记忆传感器封装技术  

Packaging Technology of the Metal Magnetic Memory Sensor

作　　者：张广伟[1] 张来斌[1] 樊建春[1] 孙秉才[1] 齐立娟[1] 赵坤鹏[1] 张仁庆[1] 

机构地区：[1]中国石油大学(北京)机械与储运工程学院,北京102249

出　　处：《无损检测》2013年第1期56-60,共5页Nondestructive Testing

基　　金：国家科技支撑计划资助项目(2008BAB37B04)

摘　　要：通过分析压力传感器和FBG传感器的结构,针对金属磁记忆传感器自身特点,结合井下作业要求,提出了金属磁记忆传感器的封装设计原则;根据该原则,设计出了一种金属磁记忆传感器的封装结构,并对其进行了有限元模拟分析;对封装后的金属磁记忆传感器实物进行了室内压力试验研究,确定了该设计的可靠性。After analyzing the packaging structures of the Pressure Sensor and Fiber Bragg Grating（FBG） Senor, this paper summarized the principle of packaging and designing for the Metal Magnetic Memory（MMM） Sensor. Under the guidance of the principle, the author designed a new packing structure for MMM senor, and then the structure was simulated in the Solidworks successfully. The packaging structure passed through two rounds pressure testing, which proved the stability of the design structure.

关 键 词：金属磁记忆 传感器 封装 压力试验 

分 类 号：TG115.28[金属学及工艺—物理冶金]