纳秒激光单脉冲烧蚀硅表面的超快成像研究  

Study on Ultrafast Imaging of Silicon Surface Ablated by a Single Nanosecond Laser Pulse

作　　者：谷鹏[1] 刘世炳[1] 刘嵩[1] 宋海英[1] 董祥明[1] 葛琪妮[1] 

机构地区：[1]北京工业大学激光工程研究院,北京100124

出　　处：《光学与光电技术》2013年第1期18-20,共3页Optics & Optoelectronic Technology

基　　金：国家自然科技基金(10974010);北京市教委科技计划重点项目(KZ201110005001)资助项目

摘　　要：利用ICCD可以在纳秒时间尺度下成像的特点,以飞秒准连续激光产生的超短脉冲光为探测光,对纳秒激光单脉冲烧蚀硅靶表面的演化过程进行动态监测。在能量密度为50J/cm2时,捕获了纳秒单脉冲激光烧蚀硅靶面过程中等离子体演化的时间分辨图像。图像表明,纳秒激光烧蚀硅靶产生的等离子体开始时密度大,膨胀速度快,当纳秒激光脉冲过后,等离子体不再产生,并且其膨胀速度不再增加,直至完全消失。The characteristics of ICCD imaging in nanosecond time scale and ultrashort pulse produced by femtosecond laser as probe light are used to dynamically monitor the evolutionary process of the silicon surface ablated by a single nanosecond laser pulse. In the process of the silicon surface ablated by a single nanosecond laser pulse with energy density at 50J/cm^2 , the transient state of plasma imaging at different moment is captured. The imagines indicate that when the silicon surface is ablated by a single nanosecond laser pulse, the produced plasma is increased and its propagation is very fast at first. And when the nanosecond laser pulse passes, the amount and propagation of the plasma don＇t increase any more until it disap- pears.

关 键 词：纳秒激光 硅靶 飞秒激光 超快成像 等离子体 时间分辨图像 

分 类 号：TN249[电子电信—物理电子学]