基于各向异性磁阻的开关芯片的制备及优化  

Fabrication and optimization of integrated magnetic switch

作　　者：艾明哲[1] 贾雅婷[1] 陈忠志 徐慧中[1] 彭斌[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054 [2]上海腾怡半导体有限公司,上海201206

出　　处：《功能材料》2013年第4期577-580,共4页Journal of Functional Materials

基　　金：四川省科技支撑计划资助项目(2011GZ0118)

摘　　要：采用射频磁控溅射法用Ta作为缓冲层,在集成电路晶元上制备NiFe薄膜,并研究分析了Ta缓冲层厚度以及Ta缓冲层溅射功率对NiFe磁阻薄膜性能的影响,通过测试结果可以得到,当溅射功率由小变大时,NiFe薄膜的磁阻值也由小变到大。当Ta层的厚度在5nm左右时,NiFe更容易形成(111)织构,这时其磁阻值也最大。利用优化后的工艺,在晶元上制备NiFe薄膜,测试结果显示出开关特性,其开关场分别在398和796A/m左右。In this paper,radio frequency and DC magnetron sputtering were used to prepare NiFe thin-film.The influence of the thickness of Ta buffer layer and the sputtering power of the NiFe thin-film were investigated.Results show that increase of the sputtering power can increase the MR of the NiFe film which is resulted from the enhanced（111） texture of the NiFe film.Lift-off procedures were used to fabricate the MR resistance bridge onto wafers.The chips show magnetic switch between at 398 and 796A/m.

关 键 词：各向异性磁阻 NiFe薄膜 缓冲层 磁阻开关 

分 类 号：TB332[一般工业技术—材料科学与工程]