一种工作在亚阈值区的CMOS基准电压源设计  

Design of CMOS process reference voltage in subthreshold region

作　　者：王元发[1] 魏全[1] 傅兴华[1] 

机构地区：[1]贵州大学贵州省微纳电子与软件技术重点实验室,贵州贵阳550025

出　　处：《微型机与应用》2013年第4期27-29,32,共4页Microcomputer & Its Applications

基　　金：贵州大学研究生创新基金资助项目(理工2012018)

摘　　要：提出了一种在低电源电压下工作的CMOS电压基准源，其基准电路采用工作在亚闽值区的nMOS晶体管和自偏置的共源共栅晶体管组合，该电路基准电流产生部分采用两个负反馈回路，确保了基准电流的稳定性。该电路采用标准的0．5IxmCMOS工艺，用Cadence中的Spectre仿真。在fs工艺角下，27℃时基准电压为1．52V，在120℃范围内（-20℃=～100℃）的温度系数可低至31．33ppm／℃。This paper presents a CMOS voltage reference circuit operating at a low supply voltage. The reference circuit is a combination of nMOS transistors operating in subthreshold region and self-cascode configuration transistors. In order to ensure the stability of the reference current, two negative feedback loops are used for the current generating circuit. The circuits are designed and simulated in a standard 0.5μm CMOS process by using spectre in Cadence. The output voltage is 1.52 V at 27℃ and the measured results have shown temperature coefficient as low as 31.33 ppm/℃ range of 120℃（-20℃-100℃）in fs proess comer.

关 键 词：CMOS电压基准源 低电源电压 亚阈值 自偏置共源共栅 温度系数 

分 类 号：TN432[电子电信—微电子学与固体电子学]