二氧化锡纳米线自催化生长及其发光特性研究  

Selfcatalysis Growth of SnO_2 Nanowires and Its Photoluminescence Characteristics

作　　者：李玉国[1] 翟冠楠[1] 张晓森[1] 王宇[1] 方香[1] 

机构地区：[1]山东师范大学物理与电子科学学院半导体研究所,济南250014

出　　处：《半导体光电》2013年第1期62-65,共4页Semiconductor Optoelectronics

摘　　要：在没有添加任何催化剂情况下,通过热蒸发锡粉制备了二氧化锡纳米线。利用扫描电子显微镜,X射线衍射和透射电镜对上述纳米线进行了结构表征。实验结果表明二氧化锡纳米线直径在100～400nm,长度达数十微米。PL分析表明当激发波长为325nm时,在581nm处出现较强的黄色发光峰;在激发波长为250nm时,在可见光区域579nm处形成较强的发光峰,同时伴随一个385nm处较弱的发光峰。二氧化锡纳米线的生长机制符合气-固生长模式。The uniform single-crystalline tin dioxide nanowires were fabricated by thermal evaporation of Sn powers at 1 000 ℃without any catalyst. Scanning electron microscopy , X-ray diffraction and Transmission electron microscopy were used to characterize the structures of the nanowires, and it is indicated that the diameter of SnO2 nanowires is ranging from 100 nm to 400 nm, and about tens of micrometers in length. The photoluminescence （PL） spectrum shows that a sharp yellow emission peak at around 581 nm with the excitation wavelength at 325 nm; with the excitation wavelength at 250 nm, a sharp emission peak at around 579 nm along with a weak peak at 385 nm. The formation of SnO2 nanowires follows a vapor-solid （VS） growth mechanism.

关 键 词：SNO2 纳米线 自催化 光致发光 

分 类 号：TB381.1[一般工业技术—材料科学与工程]