直流磁控溅射法制备本征ZnO薄膜及光伏应用研究  

Photovoltaic Applications and Characterization of Un-doped ZnO Films Prepared by Direct Current Magnetron Sputtering

作　　者：杨志军[1] 王波[1] 张静全[1] 冯良桓[1] 武莉莉[1] 李卫[1] 黎兵[1] 

机构地区：[1]四川大学材料科学与工程学院,成都610064

出　　处：《半导体光电》2013年第1期74-78,共5页Semiconductor Optoelectronics

基　　金：国家"863"计划项目(2009AA05060)

摘　　要：采用直流磁控溅射法制备了ZnO薄膜,研究了沉积过程中变换氧分压对薄膜光电性能的影响。采用XRD、紫外可见光分光光度计及AFM等方法对薄膜的结构和光电性质进行了表征。结果表明,ZnO薄膜在可见光范围内的透过率可达88%,并且随着氧分压的增大,薄膜的透过率也增大;制备出的ZnO薄膜表面粗糙度为0.41nm。在glass/ITO/CdS/CdTe结构的太阳电池中,将本征ZnO薄膜作为高阻层加入到ITO与CdS之间,电池的开路电压和填充因子有明显的提高,加入高阻层之后,电池的转换效率最高可达13.6%。Un-doped ZnO films were deposited by direct current （DC） magnetron sputtering and the film structure and properties were characterized by X-ray diffraction（XRD）, UV/VIS spectrometer and atomic force microscope （AFM）, respectively. The effects of process parameters, such as oxygen partial pressure, on the properties of ZnO film were studied. It is shown that the average transmittance in the visible region can reach 88 ~//00 and it increases with higher oxygen partial pressure, and the root mean square （RMS） roughness is about 0.41 nm. For the solar cells with the structure of glass/ITO/CdS/CdTe, un-doped ZnO films are deposited as the buffer layer between ITO layer and CdS layer, then the open voltage and filling factor of the cells are greatly improved. The conversion efficiency of the devices with ZnO films reaches up to 13.6%.

关 键 词：ZNO薄膜 太阳电池 直流溅射 CDTE 

分 类 号：TM914.4[电气工程—电力电子与电力传动]