抛光腐蚀深度对多晶硅片抛光与位错刻蚀效果的影响  

EFFECT OF CORROSION DEPTH ON POLISHING AND DISLOCATION ETCHING OF MULTICRYSTALLINE SILICON WAFERS

作　　者：周剑[1] 辛超[1] 魏秀琴[1] 周潘兵[1] 周浪[1] 张运锋 张美霞 

机构地区：[1]南昌大学材料学院/光伏学院,南昌330031 [2]英利能源(中国)有限公司,保定071051

出　　处：《太阳能学报》2013年第2期213-217,共5页Acta Energiae Solaris Sinica

摘　　要：对抛光液新旧程度、抛光时间、抛光腐蚀深度等条件对多晶硅片抛光与位错刻蚀显示效果的影响进行实验研究。发现多晶硅片抛光效果与抛光时间无直接对应关系,而取决于抛光腐蚀深度。当硅片抛光腐蚀深度小于45μm时,抛光效果不佳,而大于此深度时,抛光效果良好。多晶硅片抛光腐蚀深度会明显影响之后刻蚀显示的位错密度,较浅时得到的位错密度值将偏高,影响区的深度大于19μm。提出一个表征化学腐蚀抛光液新旧程度的参数——硅溶解系数K,给出了抛光腐蚀速率、抛光液表观色泽与K值之间的明确对应关系。The effects of polishing solution condition, polishing time and polishing corrosion depth on the polishing When the depth is less than 45μm, the polishing quality is poor, while when it is more than 45μm, the quality becomes good. The dislocation density revealed by the subsequent pit-etching is greatly affected by the depth of polishing corrosion, with shallower polishing resulting in higher dislocation density. A parameter K, the silicon dissolving coefficient, was proposed to characterize the freshness of polishing solution. The value and the polishing corrosion rate, and the apparent color of the polishing solutions are relationships between K given.

关 键 词：抛光 多晶硅片 位错 抛光腐蚀深度 

分 类 号：TG175.3[金属学及工艺—金属表面处理]