氧化铪薄膜的制备及其性能研究  

Research on the Preparation and Properties of HfO2 Thin Films

作　　者：王成[1] 周新文[1] 侯令涛[1] 周俊[1] 李伟[1] 吴干德[1] 刘义稳[1] 明莉[1] 潘家荣[1] 

机构地区：[1]三峡大学化学与生命科学学院,湖北宜昌443002

出　　处：《纳米科技》2013年第1期43-45,68,共4页

摘　　要：采用电子束反应蒸发金属铪、APS离子辅助反应蒸发氧化铪、RF离子辅助反应蒸发氧化铪三种方式制备了单层HfO2薄膜，对样品的光学性能、结构特性以及抗激光损伤特性进行研究，结果表明，离子辅助使氧化铪薄膜更为致密；电子束蒸发氧化铪薄膜为非晶态，离子辅助制备氧化铪薄膜为晶态。选择合适的离子辅助工艺，有利于降低薄膜的缺陷吸收，提高氧化铪薄膜的抗损伤性能。Huafnium oxide （HfO2） monolayer films are synthesized by three different deposition techniques including electron beam evaporation （EB） of metal Hi＇, APS ion source assisted EB of HfO2,RF ion source asstied EB of HfO2. The optical performance, structural characterization and the ability of laser damage threshold of the three kinds HfO2 films are investigated. The results shows that HfO2 films obtained by ion assisted technology are more compact than others. The HfO2 films are amorphous and crystalline obtained by EB and the ion-assisted EB technique, respectively. The appropriate ion-assist process can reduce defect induced absorbance and improve the performance of laser damage threshold of HfO2 films.

关 键 词：氧化铪 离子辅助 薄膜 结构 吸收 

分 类 号：TB43[一般工业技术]