多晶硅纳米膜压阻超薄微梁加速度敏感结构  

Polysilicon Nanofilms Piezoresistive Acceleration Sensor with Ultra-thin Micro-beam

作　　者：揣荣岩[1] 白羽[1] 吴美乐[1] 代全[1] 靳晓诗[1] 

机构地区：[1]沈阳工业大学信息科学与工程学院,辽宁沈阳110870

出　　处：《仪表技术与传感器》2013年第1期1-3,15,共4页Instrument Technique and Sensor

基　　金：国家自然科学基金资助项目(60776049);辽宁省科学技术基金资助项目(20072036)

摘　　要：随着微机电系统(MEMS)技术的迅速发展,硅基加速度传感器已经得到广泛应用。但在敏感结构设计中,普遍存在灵敏度与固有谐振频率相互制约的矛盾。为此,采用多晶硅纳米膜作应变电阻,设计了300 nm超薄微梁加速度敏感结构。这种结构的设计改善了灵敏度与谐振频率之间的矛盾,使两者乘积值提高了30余倍,从而使压阻加速度计的性能得到大幅提升。With the rapid development of microelectromechanical systems （MEMS）, silicon acceleration sensor has been widely applied. But for the design of the sensitive structure, there exists a compromise between sensitivity and natural resonant frequency in general. Thus, an acceleration sensitive structure with ultra-thin micro-beam of 300 nm thickness was designed, for which the polysilicon nanofilms was adopted as the strain resistance. The design of this kind of structure optimized the compromise between sensitivity and natural resonant frequency, which made the product of this two factors increase more than 30 times. Consequently, the performance of the piezoresistive accelerometer was largely improved.

关 键 词：加速度传感器 多晶硅纳米膜 压阻式 超薄微梁 谐振频率 

分 类 号：TN61[电子电信—电路与系统] TN65