基体偏压对反应磁控溅射ZrN/α-SiN_x纳米多层薄膜结构及性能的影响  

Effects of the Bias Voltage on the Microstructure,Mechanical and Tribological Properties of ZrN/α-SiN_x Nanoscaled Multilayer Films

作　　者：胡明[1,2] 高晓明[1] 张立平[3] 伏彦龙[1] 杨军[1] 翁立军[1] 刘维民[1] 

机构地区：[1]中国科学院兰州化学物理研究所固体润滑国家重点实验室,甘肃兰州730000 [2]中国科学院大学,北京100039 [3]中国科学院长春光学精密机械与物理研究所,吉林长春130033

出　　处：《摩擦学学报》2013年第1期29-35,共7页Tribology

摘　　要：采用中频磁控溅射技术在3种偏压条件下(0、-80、-300V)于AISI 440C钢及单晶Si(100)基体表面制备了ZrN/α-SiNx纳米多层薄膜.通过高分辨透射电子显微镜(HRTEM)分析表征了各纳米多层薄膜微观组织结构,并通过纳米压入仪与真空球-盘摩擦试验机分别测试了各薄膜力学及真空摩擦学性能.重点研究了基体偏压对ZrN/α-SiNx纳米多层薄膜微观组织结构,进而对其力学及摩擦学性能的影响机制.结果表明:较低的基体偏压会导致纳米多层薄膜中ZrN层差的结晶状态,而较高的基体偏压则易于引起ZrN层与SiNx层层间界面的交混.上述两种薄膜组织及结构的变化均不利于该纳米多层薄膜力学及摩擦学性能的改善.在适宜的偏压条件下(-80 V),ZrN/α-SiNx薄膜呈现出具备良好层间界面的晶体/非晶体纳米多层结构,与其他偏压条件制备的纳米多层薄膜相比,该薄膜表现出更好的力学及摩擦学性能.The ZrN/α-SiNx nanoscaled multilayer films were deposited under different substrate bias voltage by reactive magnetron sputtering. The microstructures of these films were analyzed using high resolution transmission electron microscope（ HRTEM ）. The mechanical and tribological properties of these films were comparatively investigated by nanoindenter and ball - on - disc tribometer in vacuum condition, respectively. The results reveal that lower bias condition may result ZrN layers characterized with amorphous （ or amorphous - like） microstructrue in muhilayer films. And the higher bias voltage condition may result mixing of interfaces between ZrN layers and SiNx layers in muhilayer films. The transformation from crystal to amorphous microstructure of ZrN layers and interface mixing in muhilayer films may both degrade the mechanical and tribological properties of the ZrN/α-SiNx nanoscaled multilayer films. The appropriate bias voltage （ -80 V） favors the formtion of the sharp coherent interfaces between the crystalline ZrN layers and amorphous SiN layers. As a result, tire ZrN/α-SiNx, nanosealed multilayer fihn prepared under -80 V shows better mechanical and tribological properties.

关 键 词：ZRN α-SiNx纳米多层薄膜 基体偏压 微观结构 机械及摩擦学性能 

分 类 号：TH117.1[机械工程—机械设计及理论]