IGBT串联器件门极RCD有源均压电路  

Design of RCD Active Gate Control Circuit for Series Connected IGBTs

作　　者：宁大龙[1] 同向前[1] 李侠 刘宁 冯武彤 李育宁 

机构地区：[1]西安理工大学自动化与信息工程学院,西安710048 [2]西电电力系统有限责任公司,西安710016

出　　处：《电工技术学报》2013年第2期192-198,共7页Transactions of China Electrotechnical Society

基　　金：陕西省科技计划资助项目(2010K09-09)

摘　　要：研究了一种门极RCD有源均压电路,用于解决IGBT串联组件中各个器件集射极电压动态分配不均衡的问题。介绍了门极RCD有源均压电路的工作原理和参数选择原则,利用IGBT不同开关状态下的等效电路分析了各个均压元件的作用,提出了满足均压技术指标要求条件下门极RCD有源均压电路参数的计算方法,建立了IGBT串联均压实验系统。实验结果表明,采用本文提出的均压电路参数设计方法,门极RCD有源均压电路在门极驱动信号同步或延时情况下均具有较好的均压效果。The RCD active gate control circuit for series connected IGBTs is researched in order to balance the IGBT＇s collector-emitter voltage dynamically. The principle of the RCD active gate control circuit and parameters selection guide of the circuit elements is introduced. The function of each element is analyzed with the help of equivalent circuit under different switch states of IGBT, and the design method of RCD active gate control circuit is proposed to meet the voltage balancing requirement. The feasibility of the proposed method is verified by an experimental system, and the results show that voltage balancing is well achieved whether gate signal of IGBTs in a series stack is synchronous or not.

关 键 词：IGBT串联 均压技术 门极RCD有源均压电路 参数设计 

分 类 号：TM46[电气工程—电器]