7MPa氮压下Na助熔剂法生长GaN晶体的研究  

Growth of GaN Crystals by Na Flux Method under 7 MPa Nitrogen Pressure

作　　者：周明斌[1] 李振荣[1] 范世马岂[1] 徐卓[1] 

机构地区：[1]西安交通大学电子材料研究所电子陶瓷与器件教育部重点实验室国际电介质研究中心,西安710049

出　　处：《人工晶体学报》2013年第2期203-207,225,共6页Journal of Synthetic Crystals

摘　　要：采用Na助熔剂法在7 MPa氮压下并引入较大温度梯度(20～70℃/cm),获得了大量毫米级的GaN晶体,GaN晶体产率高达70%以上。光学及SEM照片显示其晶形大部分为六方锥体。晶体粉末衍射分析表明,生成的GaN单晶具有六方纤锌矿结构,与标准卡片符合得很好,而单晶衍射图谱中出现(101-1)的衍射峰,说明GaN单晶锥面为{101-1},其(101-1)面的摇摆曲线的半高宽仅为4.4 arcsec,室温下采用He-Cd 325 nm激光器激发的GaN单晶的PL谱,最高峰位于标准GaN材料的365 nm处,峰的半高宽为13.5 nm,生长的GaN单晶完整性较高。GaN pyramid shaped crystals with millimeter size have been grown by temperature gradient- applied Na flux method under 7 MPa nitrogen pressure, the yields up to 70% or more. The morphologies of GaN crystals were observed with an optical microscope and a scanning electron microscope. The quality of GaN crystal was checked by X-ray powder diffraction, X-ray rocking curve and photoluminescence （PL） spectra. The full-width at half-maximum （FWHM） of X-ray rocking curves measured for { 1011 } reflection of the crystals was 4.4 arcsec. From the room temperature photoluminescence spectrum （PL） of an as-grown GaN single crystal, a strong unique and narrow peak centered at 365 nm can be observed, and its FWHM was only 13.5 nm. Which show that GaN crystals obtained by this method possess good crystalline quality.

关 键 词：温度梯度 GaN晶体 Na助熔剂法 

分 类 号：O782[理学—晶体学]