硅异质结电池界面处理关键工艺的研究  

Investigation of the Key Technology in Improving Interface Quality of HIT Solar Cells

作　　者：王楠[1] 张瑜[1] 周玉琴[1] 

机构地区：[1]中国科学院研究生院,北京100049

出　　处：《人工晶体学报》2013年第2期235-239,共5页Journal of Synthetic Crystals

基　　金：北京市科技计划(D121100001812003);国家重点基础研究计划(973计划)(2011CBA00705)

摘　　要：薄膜硅/晶体硅异质结(HIT)太阳电池是界面器件,其界面性质直接决定器件的性能。本文采用简化的RCA清洗并结合氧化膜保护工艺对硅片进行前期处理;采用等离子体增强化学气相沉积技术(PECVD)制备薄膜硅/晶体硅异质结;通过光发射谱(OES)研究了PECVD在不同的匹配速度下起辉基元浓度随时间的变化,证实了基元浓度的不稳定对电池界面性质有一定的影响;分析了退火工艺对异质结的界面特性的影响,在10-4Pa量级的背景真空和200℃下进行退火,可显著提高电池开路电压VOC和填充因子FF。本文结果表明:硅片前期处理的氧化膜保护工艺及后退火处理,皆可明显地改善HIT电池的界面性质、提高电池的转换效率。The heterojunction with intrinsic thin-layer （HIT） solar cell is a kind of interface device, and interface quality is a key role for its device characteristics. In this paper, the c-Si substrates were cleaned by a simplified process of Radio Corporation of America （RCA） and protected by hot deionized water oxidation; the heterostructures were prepared by plasma-enhanced chemical vapor deposition （PECVD） ; for radio-frequency power supply has two impedance match patterns： auto match and manual match, optical emission spectroscopy （OES） was applied to measure the change of spectrally resolved plasma in the different impedance match patterns, and it is demonstrated that instability of plasma has a certain influence on interface quality of HIT; as post annealing at 200 ~C in high vacuum （ 10 -4 Pa）, it is indicated post annealing treatment can improve the open-circuit voltage and filling factor of HIT solar cells significantly. Our results indicated that, substrates pre-treatment by hot deionized water oxidation and heterojunction by post annealing treatment, can obviously improve the interface quality of heterojunction and the efficiency of HIT ceils as well.

关 键 词：硅异质结太阳电池 钝化处理 等离子体初期不稳性 退火处理 界面特性 

分 类 号：O614.241[理学—无机化学]