含Ni-Nb阻挡层的硅基Pb(Zr_(0.4),Ti_(0.6))O_3电容器的制备及铁电性能研究  

Preparation and Ferroelectric Properties of Si-based Pb(Zr_(0.4),Ti_(0.6))O_3 Capacitor Using Ni-Nb as the Barrier Layer

作　　者：赵庆勋[1] 齐晨光[1] 贾冬梅[1] 付跃举[1] 郭建新[1] 刘保亭[1] 

机构地区：[1]河北大学物理科学与技术学院,保定071002

出　　处：《人工晶体学报》2013年第2期282-285,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金(11074063);河北省应用基础研究计划重点项目(10963525D);高等学校博士点基金(20091301110002);河北省自然科学基金(E2011201092)

摘　　要：采用Ni-Nb薄膜作为导电阻挡层,以La0.5Sr0.5CoO3(LSCO)为底电极,构建了LSCO/Pb(Zr0.4,Ti0.6)O3(PZT)/LSCO异质结电容器。使用X射线衍射仪和铁电测试仪对其进行结构表征和性能测试。实验发现:Ni-Nb薄膜为非晶结构,PZT薄膜结晶状况良好。LSCO/PZT/LSCO电容器在5 V外加电压测试下,电滞回线具有良好的饱和趋势,剩余极化强度Pr为35.5μC/cm2,矫顽电压Vc为1.42 V,电容器具有良好的抗疲劳特性和保持特性。The Ni-Nb film was used as a conductive barrier layer to integrate Lao. 5Sr0.5 CoO3 （LSCO）/Pb （ Zro.4, Ti06 ） 03 （ PZT）/La0.5Sr0.5CoO3 （LSCO） heterostructure capacitor on Si substrates. The structural and physical properties of the capacitor were inves -ray diffraction results showed that the Ni-Nb film condition. It is found that the LSCO/PZT/LSCO tigated by X-ray diffraction and a ferroelectric tester. X is amorphous, and the PZT film is crystalline in good capacitor presented a saturated hysteresis loop at 5 V applied voltage ferroelectric property measurement. The remnant polarization and coercive voltage of the LSCO/PZT/LSCO capacitor are 35.5 μC/cm2 and 1.42 V, respectively. Moreover, it is found that the capacitor possessed good fatigue and retention characteristics.

关 键 词：Ni-Nb阻挡层 Pb(Zr0.4 Ti0.6)O3 La0.5Sr0.5CoO3 

分 类 号：O484[理学—固体物理]