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作 者:T Fujihira MIEEE A Otsuki Y Takahashi MIEEJ T Ide M Kawano N Eguchi SMIEEJ
机构地区:[1]Fuji Electric Co.,Ltd.,1-11-2 Osaki,Tokyo 141-0032,Japan
出 处:《电力电子技术》2013年第3期8-10,共3页Power Electronics
摘 要:Excellent electrical properties and the impact of latest power devices for improving the efficiency of photovohaic(PV) inverters are presented.Power modules using SiC-MOSFET and SBD exhibit the possibility to realize PV inverters with peak efficiency beyond 99%.Si-IGBT modules using reverse-blocking(RB)-IGBT have enabled to massproduce PV inverters with peak efficiency of 98.4%.Si superjunction(SJ)-MOSFET and discrete IGBT have enabled to improve the efficiency of small power PV inverters by 0.5 point.Excellent electrical properties and the impact of latest power devices for improving the efficiency of photovohaic(PV) inverters are presented.Power modules using SiC-MOSFET and SBD exhibit the possibility to realize PV inverters with peak efficiency beyond 99%.Si-IGBT modules using reverse-blocking(RB)-IGBT have enabled to massproduce PV inverters with peak efficiency of 98.4%.Si superjunction(SJ)-MOSFET and discrete IGBT have enabled to improve the efficiency of small power PV inverters by 0.5 point.
关 键 词:power DEVICE SUPERJUNCTION PHOTOVOLTAIC INVERTER efficiency
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