检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
作 者:李剑文[1] 戴新义[1] 黄宗令[1] 周爱军[1] 李晶泽[1]
机构地区:[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610051
出 处:《中国科技论文》2013年第2期104-108,共5页China Sciencepaper
基 金:国家自然科学基金资助项目(51211140045);高等学校博士学科点专项科研基金资助项目(20100185110019);教育部新世纪人才计划资助项目(NCET-10-0296)
摘 要:通过控制直流磁控溅射时间在15~3 600 s之间制备出系列不同厚度的Sn薄膜负极,研究了沉积时间变化对首周不可逆容量损失的影响。当Sn薄膜沉积时间为15 s时,首周放电容量远远大于理论容量,其中首周充放电不可逆容量损失占首周放电容量的56%以上,1.5 V至锡锂合金化反应电位0.67 V之间出现的SEI膜是造成该不可逆容量的主要原因。随着薄膜沉积时间增加,首周容量损失呈现非单调变化趋势。当沉积时间低于600 s时,首周容量损失与SEI膜容量变化趋势基本一致;当沉积时间长于600 s时,首周容量损失单调递增,而SEI膜容量单调下降,说明SEI膜的形成不再是首周容量损失的主要原因。应用X射线衍射仪和扫描电子显微镜对不同沉积时间Sn薄膜进行结晶形态和表面形貌分析,探讨了薄膜表面形貌、结晶形态与SEI膜容量及首周不可逆容量损失之间的关系。A series of Sn thin films were prepared by direct current magnetron sputtering with the deposition time ranging from 15 s to 3 600 s. When the deposition time was 15 s, the irreversible capacity of 1st discharge/charge cycle was more than 56% of the discharge capacity, which was mainly attributed to a slope plateau representing the formation of solid-state electrolyte interface (SEI) layer between 1.5 V and 0. 67 V. The changed trend of irreversible capacity was consistent with that of SEI capacity when deposition time was less than 600 s. When the deposition time was over 600 s, the total irreversible capacity increased quickly with the deposition time. As a contrast, SEI capacity exhibited a different tendency when the deposition time was more than 120 s, where the SEI capacity decreased monotonously with the increase of the deposition time. By virtue of XRD and SEM analytical techniques, it was found that the morphology and crystallinity of the film played important roles in the SEI capacity and irreversi- ble capacity losses of the 1st cycle.
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:18.218.181.138