Microlens fabricated in silicon on insulator using porous silicon  

作　　者：钟福如 吕小毅 贾振红 田敏 

机构地区：[1]College of Information Science and Technology, Shihezi University [2]College of Information Science and Engineering, Xinjiang University

出　　处：《Optoelectronics Letters》2013年第2期105-107,共3页光电子快报（英文版）

基　　金：supported by the National Natural Science Foundation of China (No.60968002);the Excellent Youth Foundation of Shihezi University (No.2012ZRKXYQ-YD20)

摘　　要：In order to realize the planar gradient refractive index (GRIN) microlens which is based upon porous silicon (PSi) and fabricated on silicon on insulator (SOI), a novel anodization method is used by applying lateral electric field. The microlens with smooth variation of the effective optical thickness is achieved. The lens is transparent in the infrared region, including the optical communication window (1.3 μm<λ<1.6 μm). This approach also allows the fabrication of an array of such lenses on SOI, and the GRIN microlens can be used as potential components in future silicon-based integrated optical circuits.In order to realize the planar gradient refractive index （GRIN） microlens which is based upon porous silicon （PSi） and fabricated on silicon on insulator （SOI）, a novel anodization method is used by applying lateral electric field. The mi- crolens with smooth variation of the effective optical thickness is achieved. The lens is transparent in the infrared re- gion, including the optical communication window （1.3 ~tm〈2〈 1.6 ~tm）. This approach also allows the fabrication of an array of such lenses on SOI, and the GRIN microlens can be used as potential components in future silicon-based integrated optical circuits.

关 键 词：绝缘体上硅 微透镜 多孔硅 制造 GRIN 梯度折射率 横向电场 光学厚度 

分 类 号：TN304.12[电子电信—物理电子学]