基于APD参数建模的单光子探测研究  

Investigation of single-photon detection based on APD parametric modeling

作　　者：艾青[1] 万钧力[2] 

机构地区：[1]湖北理工学院电气与电子信息工程学院,湖北黄石435003 [2]三峡大学电气与新能源学院,湖北宜昌443002

出　　处：《量子电子学报》2013年第2期219-224,共6页Chinese Journal of Quantum Electronics

基　　金：湖北省自然科学基金(2010CDB10803);湖北理工学院科研项目基金(09yjz42B)资助

摘　　要：针对单光子雪崩光电二极管(SPADs)的单光子量子效率(SPQE),提出了一种严格的数学模型。模型适用于工作波长为1.3μm和1.5μm的In_(0.52)Al_(0.48)As、InP倍增层和In_(0.52)Al_(0.48)As-InP异质结倍增层的SPADs。模型作为器件结构、工作电压、倍增层材料的函数,可用来优化SPQE,进而评估和优化盖革模式下APDs的性能。According to single-photon quantum efficiency （SPQE） of single-photon avalanche photodiodes （SPADs）, a strict mathematical model was proposed. The model is suitable for SPADs with In0.52A10.48As or InP multiplication layer as well as In0.52Alo.4sAs-InP heterojunction multiplication layer for operating wavelengths of 1.3 μm and 1.5 μm. As the function of the device structure, operating voltage, and multi- plication layers materials, the model can be used to optimize SPQE, furthermore evaluate and optimize the performance of APDs in Geiger mode.

关 键 词：光电子学 单光子量子效率 雪崩概率 暗计数 雪崩光电二极管 

分 类 号：TN364[电子电信—物理电子学] TN919