蓝宝石衬底基片工艺质量检测指标及方法的研究进展  

Research progress of detection technology for sapphire substrate

作　　者：徐晓明[1,2] 周海[2] 卓志国[1,2] 臧跃[2,3] 

机构地区：[1]常州大学,常州213016 [2]盐城工学院,盐城224051 [3]江苏大学,镇江212013

出　　处：《现代制造工程》2013年第3期87-90,114,共5页Modern Manufacturing Engineering

基　　金：江苏省自然科学基金项目(BK2008197);江苏省高校科研成果产业化推进项目(JH10-X048);江苏省"青蓝工程"项目;江苏省新型环保重点实验室开放课题基金项目(AE201120);江苏省生态环境材料重点建设实验室开放课题资助项目(EML2012013);国际科技合作聘专重点资助项目

摘　　要：根据蓝宝石衬底基片国家标准和国际质量保证体系标准,结合目前蓝宝石衬底基片生产和科研的实际情况,阐述了目前蓝宝石衬底基片生长、掏棒切片、研磨抛光和清洗加工过程中的质量检测指标、检测方法,以及检测设备。指出了蓝宝石衬底基片检测技术的研究对衬底基片生产的重要性。总结了蓝宝石衬底基片检测技术的现状,半导体材料GaN衬底用蓝宝石单晶的纯度要达到99.999%以上,位错密度在102/cm2范围内,晶片切片厚度偏差不超过20μm,表面粗糙度要达到Ra0.3nm水平。指出了现有检测技术的不足和今后的发展趋势,对蓝宝石衬底检测技术的进一步发展具有引导性的作用。According to international and Chinese standards of sapphire substrate, the actual situation of production and research for sapphire substrate, it elaborates the quality detection index, detection methods and detection equipment in growing, digging stick and slicing.grinding and polishing,cleaning for sapphire substrate. The signification of quality inspection for sapphire sub-strate has been presented. Summary the present situation of detection technology for sapphire substrate, the purity is higher than 99. 999% ,the defect concentration is in the 10^2/cm^2 level,the thickness deviation is no more than 20μm,the surface roughness is Ra 0. 3nm. To the development of detecting for sapphire substrate, the lack of detection technology today and its trend are pointed, it is hoped that can get the right direction to make ahead.

关 键 词：蓝宝石 衬底 检测指标 检测方法 检测设备 

分 类 号：TH16[机械工程—机械制造及自动化]